Martin Gutsche joined the NTB University of Applied Sciences in August 2005. He is Professor of Microtechnology and Scientific Head at the Institute of Micro- and Nanotechnology. His research focus is in the area of process and materials technology for the fabrication of microsystems. Prior to joining the faculty at NTB, he was a project manager with Infineon Technologies in Munich, Germany, focusing on the development of high-k materials and later the benchmarking of DRAM technology. He initiated Atomic Layer Deposition for DRAM applications at Infineon Technologies. From 1996 to 1998, Martin Gutsche was a Long Term Delegate with Siemens Microelectronics in the joint DRAM Development Alliance with IBM in Fishkill and Yorktown, USA, where he worked on plasma etch processes for semiconductor applications. Martin Gutsche received a Ph.D. in Physics from the Technical University of Munich for his research on thin-film cryo-detectors. He has authored or co-authored more than 30 technical publications and holds more than 40 patents.
At the Institute for Micro- and Nanotechnology we are engaged in applied research and development projects in close cooperation with industrial partners and other research institutions. Our expertise covers a large range of the microtechnology field and of other engineering disciplines.
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