Packaging
Semi-Automated Wafer Bond System
| Substratdurchmesser: | 100mm |
| Bondkraft: | 3500N |
| Max. Fügetemperatur: | 550°C |
| Min. Kammerdruck: | 10-4mbar |
| Substrate: | Si, Aluminiumoxid, BF33, AF32, D263, Stahl, Folien, etc. |
| eutektisch: | Cu-Sn, Au-Sn, Au-Si, etc. |
| thermokompressiv: | Au-Au, Pt-Pt, Glas-Glas, etc. |
| anodisch: | Si-BF33, Al-BF33, Cr-BF33, Ta-BF33, etc. |
| Typ: | EVG 520 |